In-Plane Grain Orientation Alignment of Polycrystalline Silicon Films by Normal and Oblique-Angle Ion Implantations
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概要
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Random crystallographic orientations of polycrystalline silicon (poly-Si) grains in the films grown on a SiO2 substrate by chemical vapor deposition were laterally aligned by maintaining the {110} restricted pillar texture through double Si+ self-ion implantations. The in-plane X-ray diffraction pattern and rocking curve clearly indicate the lateral alignment. The oblique-angle Si+ self-ion implantation was also found to be useful for increasing the amount of the {110} pillar texture. The electron backscatter diffraction (EBSD) pattern supports the increase in the amount of the {110} pillar texture and the lateral crystal orientation alignment. The transmission electron micrography and EBSD results also suggest that grain size is increased by double Si+ self-ion implantations. Although further systematic optimization may be required, the technique will be useful for improving the electrical characteristics of poly-Si devices for future electronic systems on insulators.
- 2012-04-25
著者
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Nakajima Anri
Research Center For Nanodevices And Systems Hiroshima University
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KUROKI Shin-Ichiro
Graduate School of Engineering, Tohoku University
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FUJII Shuntaro
Graduate School of Engineering, Tohoku University
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Kuroki Shin-Ichiro
Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
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Fujii Shuntaro
Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
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Ito Takashi
Research Institute for Nanodevice and Bio Systems, Hiroshima University, Higashihiroshima, Hiroshima 739-8527, Japan
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