Preferential Nucleation of Nanocrystalline Silicon along Microsteps
スポンサーリンク
概要
- 論文の詳細を見る
We propose digital plasma processing for the fabrication of silicon quantum dots on SiO2 substrates patterned with microtrenches. It has been found that nucleation of nanocrystalline Si (nc-Si) takes place preferentially along the trench structure with post hydrogen plasma annealing of the hydrogenated amorphous Si (a-Si:H) layer at a substrate temperature of 250°C. The preferential nucleation of nc-Si can be explained in terms of a "hydrogen diffusion model", in which hydrogen radicals which diffuse through the a-Si:H layer to the interface of a-Si:H and SiO2 trigger the crystallization.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
-
Oda Shunri
Research Center For Quantum Effect Electronics And Department Of Physical Electronics Tokyo Institut
-
OTOBE Masanori
Research Center for Quantum Effect Electronics and Department of Physical Electronics, Tokyo Institu
-
Kawahara Jun
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
-
Oda Shunri
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152, Japan
-
Otobe Masanori
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152, Japan
-
Kawahara Jun
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152, Japan
関連論文
- 26aXG-4 シリコン結合量子ドットの電子輸送特性評価(量子ドット,領域4,半導体,メゾスコピック系・局在)
- HfO_2薄膜成長過程の分光エリプソメトリによるその場観察と第一原理計算との比較(ゲート絶縁膜, 容量膜, 機能膜及びメモリ技術)
- 21世紀の単電子デバイス
- 電子材料-ナノシリコンとネオシリコン
- ULSI技術は電気化学の時代
- Single Electron Memory Devices Based on Plasma-Derived Silicon Nanocrystals
- Electron Transport in Nanocrystalline Si Based Single Electron Transistors
- Single-Electron Tunneling Devices Based on Silicon Quantum Dots Fabricated by Plasma Process
- ナノクリスタルシリコンによる単電子デバイス
- Electric Field-Effect Enhancement by a Combination of Coplanar High-Tc Superconducting Devices with Step-Edge Junctions
- Atomic Layer-by-Layer Metal-Organic Chemical Vapor Deposition of SrTiO_3 Films with a Very Smooth Surface
- Electric Properties of Coplanar High-T_c Superconducting Field-Effect Devices
- 単電子デバイス・回路の研究状況と今後の展望
- MOCVD法による酸化物超伝導薄膜のエピタキシャル成長(酸化物のエピタキシー)
- 酸化物超伝導体の原子層MOCVD法における光学的その場成長モニタ- (原子レベルでの結晶成長機構) -- (成長表面と界面構造)
- 27pC2 水素プラズマ処理による微結晶シリコンの核形成と成長(気相成長III)
- CVDによる酸化物超伝導体のlayer by layer成長とin situ光学モニタ-
- マイクロエレクトロニクス学生実験 (基礎研究特集号) -- (基礎研究と大学教育)
- Si微粒子のカソードルミネッセンス
- シリコン技術
- 強磁場印加による(110)pMOSFETサブバンド構造の直接的観測(IEDM特集(先端CMOSデバイス・プロセス技術))
- ディジタルプロセスによる微結晶シリコンの作製と量子効果超集積デバイスへの応用
- Atomic Force Microscope Current-Imaging Study for Current Density through Nanocrystalline Silicon Dots Embedded in SiO_2
- Single Electron Memory Devices Based on Silicon Nanocrystals Fabricated by Very High Frequency Plasma Deposition
- ナノクリスタルシリコンによる単電子デバイス
- In Situ Optical Monitoring of Two-Dimensional Crystal Growth in Layer-by-Layer Chemical Vapor Deposition of YBa_2Cu_3O_x
- In Situ Monitoring of Optical Reflectance Oscillation in Layer-by-Layer Chemical Vapor Deposition of Oxide Superconductor Films
- Room Temperature Single-Electron Narrow-Channel Memory with Silicon Nanodots Embedded in SiO_2 Matrix
- Diagnostic Study of VHF Plasma and Deposition of Hydrogenated Amorphous Silicon Films
- Generation of Electron Cyclotron Resonance Plasma in the VHF Band
- Two-Gate Transistor for the Study of Si/SiO_2 Interface in Silicon-on-Insulator Nano-Channel and Nanocrystalline Si Memory Device
- Structure Analysis of SrTiO_3/BaTiO_3 Strained Superlattice Films Prepared by Atomic-Layer Metalorganic Chemical Vapor Deposition
- Fabrication and Electrical Characteristics of Single Electron Tunneling Devices Based on Si Quantum Dots Prepared by Plasma Processing ( Quantum Dot Structures)
- Selective Etching of Hydrogenated Amorphous Silicon by Hydrogen Plasma ( Plasma Processing)
- Preferential Nucleation of Nanocrystalline Silicon along Microsteps
- Preferential Nucleation of Nanocrystalline Silicon along Microsteps
- Pulsed-Source MOCVD of High-k Dielectric Thin Films with in situ Monitoring by Spectroscopic Ellipsometry
- Superconducting Properties of Ultrathin Films of YBa_2Cu_3O_x Prepared by Metalorganic Chemical Vapor Deposition at 500℃
- Preparation and Characterization of YBaCuO Superconducting Films by Low-Temperature Chemical Vapor Deposition Using β-Diketonate Complex and N_2O
- Preparation of Highly Oriented Copper Films by Photo-Assisted Chemical Vapor Deposition Using β-Diketonate Complex
- Fabrication of Nanocrystalline Silicon with Small Spread of Particle Size by Pulsed Gas Plasma ( Quantum Dot Structures)
- Stabilization of Oxygen Diffusion in Ga-Doped YBa_2Cu_3O_ Thin Films Observed by Spectroscopic Ellipsometry
- Reproducible Growth of Metalorganic Chemical Vapor Deposition Derived YBa_2Cu_3O_x Thin Films Using Ultrasonic Gas Concentration Analyzer
- In Situ Growth Monitoring During Metalorganic Chemical Vapor Deposition of YBa_2Cu_3O_x Thin Films by Spectroscopic Ellipsometry
- シリコンナノ結晶のCVD成長と新機能(ナノ結晶の成長と新機能)
- Single-Electron Transistors with Two Self-Aligned Gates
- Enhanced Dielectric Properties in SrTiO_3/BaTiO_3 Strained Superlattice Structures Prepared by Atomic-Layer Metalorganic Chemical Vapor Deposition
- Single-Electron Tunneling in Nanocrystalline Silicon
- 高不純物濃度のETSOI (Extremely-thin SOI)拡散層における移動度の異常な振る舞い(IEDM特集(先端CMOSデバイス・プロセス技術))
- 23pTM-12 シリコン量子ドットにおけるスピン効果と磁場依存性(23pTM 量子ドット,領域4(半導体,メゾスコピック系・局在))
- Preferential Nucleation of Nanocrystalline Silicon along Microsteps
- Pulsed-Source MOCVD of High-$k$ Dielectric Thin Films with in situ Monitoring by Spectroscopic Ellipsometry