Single-Electron Tunneling Devices Based on Silicon Quantum Dots Fabricated by Plasma Process
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概要
- 論文の詳細を見る
- 物理系学術誌刊行センターの論文
- 2000-01-15
著者
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小田 俊理
東工大工
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小田 俊理
東工大量子ナノ研:sorst-jst
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小田 俊理
東京工業大学量子ナノエレクトロニクス研究センター
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DUTTA Amit
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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HAYAFUNE Yoshinori
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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ODA Shunri
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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LEE Shao
Research Center for Quantum Effect Electronics and Department of Physical Electronics, Tokyo Institu
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HATATANI Shigo
Research Center for Quantum Effect Electronics and Department of Physical Electronics, Tokyo Institu
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Dutta A
Tokyo Inst. Technol. Tokyo Jpn
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Dutta Amit
Research Center For Quantum Effect Electronics And Department Of Physical Electronics Tokyo Institut
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Lee Shao
Research Center For Quantum Effect Electronics And Department Of Physical Electronics Tokyo Institut
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Hatatani Shigo
Research Center For Quantum Effect Electronics And Department Of Physical Electronics Tokyo Institut
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Oda S
Tokyo Inst. Technology Tokyo Jpn
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Oda S
Tokyo Inst. Technol. Tokyo Jpn
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Oda Shunri
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Oda Shunri
Research Center For Quantum Effect Electronics And Department Of Physical Electronics Tokyo Institut
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Oda Shunri
The Graduate School At Nagatsuta Tokyo Institute Of Technology
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Hayafune Yoshinori
Research Center For Quantum Effect Electronics And Department Of Physical Electronics Tokyo Institut
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小田 俊理
東京工業大学総合理工学研究科
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Hatatani S
Research Center For Quantum Effect Electronics And Department Of Physical Electronics Tokyo Institut
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