Tung Raymond | Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
スポンサーリンク
概要
- TUNG Raymond T.の詳細を見る
- 同名の論文著者
- Research Center For Quantum Effect Electronics Tokyo Institute Of Technologyの論文著者
関連著者
-
Tung Raymond
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
-
Oda Shunri
Research Center For Quantum Effect Electronics And Department Of Physical Electronics Tokyo Institut
-
Endoh Masato
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
-
Hattori Takeo
Department Of Electrical & Electronic Engineering Musashi Institute Of Technology
-
Kurosawa Masatoshi
Department Of Electrical And Electronic Engineering Musashi Institute Of Technology
-
Tsuchiya Yoshishige
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
-
ODA Shunri
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
-
Hattori Takeo
Department of Electrical and Electronic Engineering, Musashi Institute of Technology
-
TSUCHIYA Yoshishige
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
-
ENDOH Masato
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
-
KUROSAWA Masatoshi
Department of Electrical and Electronic Engineering, Musashi Institute of Technology
-
TUNG Raymond
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
-
Tung Raymond
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology:bell Labs Lucent Techno
-
Hattori Takeo
Department of Electrical and Electronic Engineering, Musashi Institute of Technology, 1-28-1, Tamazutsumi, Setagaya-ku, Tokyo 158-8557, Japan
-
Kurosawa Masatoshi
Department of Electrical and Electronic Engineering, Musashi Institute of Technology, 1-28-1, Tamazutsumi, Setagaya-ku, Tokyo 158-8557, Japan
-
Endoh Masato
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
著作論文
- Pulsed-Source MOCVD of High-k Dielectric Thin Films with in situ Monitoring by Spectroscopic Ellipsometry
- A Novel Technique for Ultrathin CoSi_2 Layers: Oxide Mediated Epitaxy
- Epitaxial Silicide Layers For ULSI Devices
- Pulsed-Source MOCVD of High-$k$ Dielectric Thin Films with in situ Monitoring by Spectroscopic Ellipsometry