Epitaxial Silicide Layers For ULSI Devices

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概要

• 論文の詳細を見る
• 1996-10-08

著者

• Tung Raymond

  Research Center For Quantum Effect Electronics Tokyo Institute Of Technology

関連論文

• Pulsed-Source MOCVD of High-k Dielectric Thin Films with in situ Monitoring by Spectroscopic Ellipsometry
• A Novel Technique for Ultrathin CoSi_2 Layers: Oxide Mediated Epitaxy
• Epitaxial Silicide Layers For ULSI Devices
• Pulsed-Source MOCVD of High-$k$ Dielectric Thin Films with in situ Monitoring by Spectroscopic Ellipsometry

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