Designing New Materials with Amorphous Semiconductors : Structure and Electrical Properties of Multiply Stacked a-Si/a-SiGe_x Layers
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1986-07-20
著者
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小田 俊理
東工大工
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小田 俊理
東京工業大学量子ナノエレクトロニクス研究センター
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Oda S
Tokyo Inst. Technology Tokyo Jpn
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Oda S
Tokyo Inst. Technol. Tokyo Jpn
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Oda Shunri
The Graduate School At Nagatsuta Tokyo Institute Of Technology
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SHIRAI Hajime
Research Laboratory of Engineering Materials, Tokyo Institute of Technology
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SHIMIZU Isamu
The Graduate School at Nagatsuta
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HANNA Jun-ichi
The Graduate School at Nagatsuta, Tokyo Institute of Technology
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TANABE Akihito
The Graduate School at Nagatsuta, Tokyo Institute of Technology
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NAKAMURAI Tetsuro
Research Laboratory of Engineering Materials, Tokyo Institute of Technology
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Shimizu I
Osaka Univ. Osaka Jpn
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Nakamura Toshihiko
Faculty Of Engineering Tokyo Institute Of Technology
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Oda Shunri
The Graduate School At Nagatsuta And Imaging Science And Engineering Laboratory Tokyo Institute Of T
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Shimizu I
The Graduate School At Nagatsuta Tokyo Institute Of Technology
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Hanna J
Tokyo Inst. Technol. Yokohama Jpn
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Tanabe Akihito
The Graduate School At Nagatsuta Tokyo Institute Of Technology
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