Preparation and Properties of (ZnS)_3(ZnSe)_<42> Ordered Alloys Fabricated by Plasma-Enhanced Low-Temperature Growth Technique (<Special Issue> Plasma Processing)
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概要
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Gallium-doped ZnSe and ordered alloys, (ZnS)_3(ZnSe)_<42>, were grown on a GaAs substrate. Low-temperature growth (T_g=200℃) of ZnSe and ZnS films was performed by hydrogen radical-enhanced chemical vapor deposition (HRCVD) using triethylgallium (TEGa) as the dopant source. Atomic hydrogen generated by RF plasma is used to enhance the formation of the depositing species. Two-dimensional ordered structures on the atomic scale were achieved by atomic layer epitaxy (ALE). In photoluminescence (PL) measurements of doped ZnSe films, the emission intensity attributed to the neutral donor-bound exciton increases with increasing TEGa flow rates. Strong blue PL emission was observed for the doped ZnSe film with optimized TEGa flow rate at room temperature. In X-ray diffraction (XRD) spectra of the ordered alloys, satellite peaks due to the layered structure were observed. A carrier concentration of 3×10^<16> cm^<-3> and a Hall mobility of 154 cm^2/Vs were obtained for the ordered alloy, (ZnS)_3(ZnSe)_<42>, at room temperature.
- 社団法人応用物理学会の論文
- 1994-07-30
著者
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Fujiwara H
Tsukuba Research Laboratory Hitachi Maxell Ltd.
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SHIMIZU Isamu
The Graduate School at Nagatsuta
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Fujiwara H
Toshiba Corp. Yokohama Jpn
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Shimizu I
Osaka Univ. Osaka Jpn
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Fujiwara Hiroyuki
Department Of Materials Science And Processing Graduate School Of Engineering Osaka University
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Shimizu I
The Graduate School At Nagatsuta Tokyo Institute Of Technology
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Shimizu Isamu
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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FUJIWARA Hiroyuki
The Graduate School at Nagatsuta, Tokyo Institute of Technology
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NABETA Toshiyuki
The Graduate School at Nagatsuta, Tokyo Institute of Technology
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KIRYU Hideaki
The Graduate School at Nagatsuta, Tokyo Institute of Technology
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Kiryu Hideaki
The Graduate School At Nagatsuta Tokyo Institute Of Technology
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Nabeta Toshiyuki
The Graduate School At Nagatsuta Tokyo Institute Of Technology
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