Very Stable a-Si:H Prepared by "Chemical Annealing"
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概要
- 論文の詳細を見る
Chemical reaction in the growing surface responsible for the structural for the structural relaxation during the "chemical annealing" (CA) treatment were investigated to reveal the role of active species such as atomic hydrogen and excited states of noble gases such as He^* and Ar^*. Not only atomic hydrogen, but also excited species, Ar^* or He^*, were responsible for the decrease in hydrogen content in the hydrogenated amorphous silicon (a-si:H) films. Structural relaxation was also enhanced with He^* and Ar^*. The stability under illumination was remarkably improved in the films prepared by the CA process at substrate temperatures higher than 300℃.
- 社団法人応用物理学会の論文
- 1991-05-15
著者
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SHIMIZU Isamu
The Graduate School at Nagatsuta
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HANNA Jun-ichi
The Graduate School at Nagatsuta, Tokyo Institute of Technology
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SHIRAI Hajime
The Graduate School at Nagatsuta, Tokyo Institute of Technology
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Shimizu I
Osaka Univ. Osaka Jpn
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Shimizu I
The Graduate School At Nagatsuta Tokyo Institute Of Technology
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Shimizu Isamu
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Shirai Hajime
The Graduate School At Nagatsuta Tokyo Institute Of Technology:(present Address) Saitama University
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Hanna J
Tokyo Inst. Technol. Yokohama Jpn
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