Improvement in Open-Circuit Memory, Current Efficiency and Response Speed of an Amorphous WO_3 Solid-State Electrochromic Device
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概要
- 論文の詳細を見る
The desirable configuration of an amorphous WO_3 (a-WO_3) solid-state electrochromic device (ECD) was examined in order to improve the poor open-circuit memory and low current efficiency observed in an a-WO_3/Cr_2O_3 ECD. It was found that a device with an SiO_2 (or Nb_2O_5) layer introduced between the a-WO_3 layer and the Cr_2O_3 layer exhibited long open-circuit memory and good current efficiency. The charge dissipation in the a-WO_3/SiO_2 (or Nb_2O_5)/Cr_2O_3 ECD was as low as that in an a-WO_3/liquid electrolyte ECD. In addition, reactive evaporation of Cr_2O_3 in an atmosphere of H_2O activated by thermal electrons was attempted in an effort to better the response speed of the device.
- 社団法人応用物理学会の論文
- 1982-11-20
著者
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Shimizu Isamu
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Inoue Eiichi
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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SATO Yoshiyuki
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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FUJIWARA Ryoji
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Fujiwara Ryoji
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Sato Yoshiyuki
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology:government Industrial Resea
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