The Photo-Erasable Memory Switching Effect of Ag Photo-Doped Chalcogenide Glasses
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概要
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The electric conductivity of the chalcogenide glass increased with an increase in the amount of Ag which had been photo-doped. By applying the electric field to the electrodes which were set on the surface of the Ag photo-doped chalcogenide glass film, a conductive path was grown from the cathode to the anode. As a result of the connection of the electrodes with the path, the electric resistance of the cell abruptly decreased (ON state). The path was made of the metal silver reduced by electrolysis and was diminished by irradiation with light. As the path was erased, the cell was turned into the resistant state (OFF state). The cycles were repeatable many times. There was a delay time (<I>t</I><SUB>d</SUB>) in turning the cell from the OFF to the ON state by applying the electric field (<I>E</I>). It was empirically described by the following equation for the Ag photo-doped chalcogenide glasses:<BR>t_d=aexp(-b·E)
- 公益社団法人 日本化学会の論文
著者
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Shimizu Isamu
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Kokado Hiroshi
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Inoue Eiichi
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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