Structure of Polycrystalline Silicon Thin Film Fabricated from Fluorinated Precursors by Layer-by-Layer Technique
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概要
- 論文の詳細を見る
We observed the structure of polycrystalline silicon (poly-Si) fabricated from fluorinated precursors, SiF_nH_m (n+m〓3), by repeated deposition of very thin layers, 10nm thick, and atomic hydrogen treatment (H-treatment). The surface views and the cross-sectional views of poly-Si were observed using a field-emission scanning electron microscope (FE-SEM) and transmittance electron microscope (TEM), respectively. Poly-Si was made up of columnar crystalline grains of which diameters were 200 nm or more. These columnar crystalline grains grew perpendicularly on the amorphous layer grown directly on the glass substrate. Crystalline nuclei were formed within the amorphous layer and grew into crystalline grains with the aid of H-treatment. The thickness of this incubation layer was dramatically reduced by extending the period of H-treatment.
- 社団法人応用物理学会の論文
- 1994-01-15
著者
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ISHIHARA Shinji
Research Reactor Institute, Kyoto University
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Shimizu I
Osaka Univ. Osaka Jpn
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Shimizu I
The Graduate School At Nagatsuta Tokyo Institute Of Technology
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Shimizu Isamu
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Shimizu Isamu
Tokyo Institute of Technology
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ISHIHARA Shun-ichi
Tokyo Institute of Technology, Graduate School
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HE Deyan
Tokyo Institute of Technology, Graduate School
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Ishihara Shinji
Research Teactor Institute Kyoto University
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Ishihara S
Tokyo Institute Of Technology Graduate School
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He Deyan
Tokyo Institute Of Technology Graduate School
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