Application of Amorphous Silicon to WO_3 Photoelectrochromic Device
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概要
- 論文の詳細を見る
A new optical memory device consisting of a solid-state electrochromic device (ECD) and a photoconductive amorphous silicon(a-Si) thin film was investigated. The photoelectrochromic structure, i.e. glass/ITO/a-Si/Cr_2O_3/Cr_2O_3・V_2O_5/WO_3/Au was devised in order to record an optical image with sharp contrast. When the a-Si layer was illuminated by a He-Ne laser (6328Å) of 1.6 mW output power under the application of a D.C. voltage, the color of the WO_3 layer became blue (H_xW0_3) and remained as it was after the electric field was removed. By changing the polarity of the D.C. voltage, the coloration-discoloration cycle could be repeated many times under illumination with light, with a response speed corresponding to that of the ECD.
- 社団法人応用物理学会の論文
- 1981-12-05
著者
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Shizukuishi Makoto
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology:(present Address) Teserch L
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Shimizu Isamu
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Inoue Eiichi
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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SHIMIZU Isamu
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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