Photoinjection Barriers at Chalcogenide/Se Interfaces
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概要
- 論文の詳細を見る
The photoinjection of holes from As-Se-Te alloys into Se has been studied in Se/chalcogenide/Se/poly-N-vinylcarbazole (PVK) multilayered samples. The field dependence of the photoinjection currents was found to obey the Richardson-Schottky emission law. The Schottky coefficients and the activation energies of injection were determined, keeping the field dependence of the hole transport in the PVK layer separate from that of the photoinjection currents. The former agreed approximately with the theoretical values. The latter were calculated to be 0.1 eV, 0.3 eV and 0.4 eV at ∼10^5 V/cm field, for Se/PVK, As_2Se_2Te/Se, and AS_2Se_<1.5>Te_<1.5>/Se interfaces; respectively.
- 社団法人応用物理学会の論文
- 1981-01-05
著者
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Shimizu Isamu
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Kokado Hiroshi
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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FUJIMAKI Yoshihide
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Fujimaki Yoshihide
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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