Structural and Electrical Properties of n-Type Poly-Si Films Prepared by Layer-by-Layer Technique
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概要
- 論文の詳細を見る
Polycrystalline silicon (poly-Si) films have been prepared from fluorinated precursors by introducing a layer-by-layer technique into hydrogen-radical-enhanced chemical vapour deposition (HR-CVD). The degradation in crystallinity caused by phosphine doping was found to be compensated by this novel technique and a highly ordered structure with a strong (220) orientation was observed by X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements. The hydrogen was efficiently removed from the growing film and marked evolution of the SiH_n stretching mode was observed in IR absorption measurements. The measurements of dark conductivity showed that the carrier conduction at room temperature was dominated by a process of thermionic emission over grain boundary barriers. The trapping states as well as the recombination centres at the grain boundary of the growing film were passivated with the aid of atomic hydrogen, and the resulting films showed higher photoconductivity with the ημτ product of around 10^<-4>cm^2・V^<-1>.
- 社団法人応用物理学会の論文
- 1993-08-15
著者
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ISHIHARA Shinji
Research Reactor Institute, Kyoto University
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Shimizu I
Osaka Univ. Osaka Jpn
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Shimizu I
The Graduate School At Nagatsuta Tokyo Institute Of Technology
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Shimizu Isamu
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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SHIMIZU Isamu
Graduate School, Tokyo Institute of Technology
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HE Deyan
Tokyo Institute of Technology, Graduate School
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HE Deyan
Graduate School at Nagatsuda, Tokyo Institute of Technology
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ISHIHARA Shun-ichi
Graduate School at Nagatsuda, Tokyo Institute of Technology
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Ishihara Shinji
Research Teactor Institute Kyoto University
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Ishihara S
Tokyo Institute Of Technology Graduate School
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He Deyan
Tokyo Institute Of Technology Graduate School
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