Preparation of μc-Si:H/a-Si:H Multilayers and Their Optoelectric Properties
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概要
- 論文の詳細を見る
A layered structure consisting of alternate sublayers of μc-Si:H and a-Si:H was fabricated by means of plasma enhanced CVD from fluorinated precursors, SiH_nF_m (n+m≤3), under the condition modified periodically by the addition of SiH_n as an amorphousizing agent. The structure with repeated layers of 75 Å or less in thickness was confirmed by smallangle X-ray diffraction. High photoconductivity equivalent to that of a-Si:H was maintained in the layered structures in the period of 75 Å or less despite the marked increase in optical absorption in the near-IR region of 1.0 eV-1.5 eV resulting from the optical absorption of the μc-Si:H layers.
- 社団法人応用物理学会の論文
- 1990-06-20
著者
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SHIMIZU Isamu
The Graduate School at Nagatsuta
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Shimizu I
Osaka Univ. Osaka Jpn
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Namikawa Tatsuru
Tokyo Institute Of Technology
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Namikawa Tatsuru
The Graduate School At Nagatsuta Tokyo Institute Of Technology
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Shimizu I
The Graduate School At Nagatsuta Tokyo Institute Of Technology
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Shirai Hajime
The Graduate School At Nagatsuta Tokyo Institute Of Technology:(present Address) Saitama University
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Namikawa T
Tokyo Institute Of Technology
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NAKATA Masami
The Graduate School at Nagatsuta, Tokyo Institute of Technology
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NAKATA Masami
Tokyo Institute of Technology, Graduate School
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Nakata Masami
The Graduate School At Nagatsuta Tokyo Institute Of Technology
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