Silicon-Hydrogen (SiH_n, (n,=1, 2, 3)) Bonding Configurations in Very Thin Hydrogenated Amorphous Silicon Films Deposited on Various Kinds of Substrates under Different SiH_4 Dilution Conditions
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概要
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Silicon-hydrogen (SiH_n, (n=1, 2, 3)) bonding configurations in the very thin hydrogenated amorphous silicon (a-Si:H) films (<1000 Å) fabricated on various kinds of substrates under different SiH_4 dilution conditions have been investigated by means of infrared phase-modulated ellipsometry (IRPME). The silicon-hydrogen configurations are monitored as a function of film thickness for a variety of substrates and the various SiH_4 dilution conditions of H_2, Ar and He. The deposition thickness for SiH stretching mode become dominant is strongly influenced by the nature of the substrate and the SiH_4 dilution conditions.
- 社団法人応用物理学会の論文
- 1994-11-15
著者
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Shirai Hajime
The Graduate School At Nagatsuta Tokyo Institute Of Technology:(present Address) Saitama University
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DREVILLON Bernard
Laboratoire de Physique des Interfaces et des Couches Minces, (UPR A0258 du CNRS), Ecole Polytechniq
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Drevillon Bernard
Laboratoire De Physique Des Interfaces Etdes Couches Minces (upr A0258 Du Cnrs) Ecole Polytechnique
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Drevillon Bernard
Laboratoire De Physique Des Interfaces Et Des Couches Minces (upr A0258 Du Cnrs) Ecole Polytechnique
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