Structures and Properties of (ZnS)_n(ZnSe)_m(n=1-4) Ordered Alloys Grown by Atomic Layer Epitaxy
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概要
- 論文の詳細を見る
For the first time, two types of ordered alloys, (ZnS)_n(ZnSe)_<12n> (n=1-4) and (ZnS)_3(ZnSe)_m (m=12-72), were grown on GaAs substrates at low temperature (T=200℃) by atomic layer epitaxy (ALE). Hydrogen-radical-enhanced chemical vapor deposition (HRCVD) was used to deposit the atomic layers. Layered structures were confirmed by X-ray diffraction of the deposited films, which showed satellite peaks at the expected values. Photo-luminescence (PL) measurements indicate a high quantum efficiency with a single, narrow emission band near the bandgap energy. Despite the large lattice deformation, deep-level emission intensity was negligible in a wide compositional range of the ordered alloys, (ZnS)_3(ZnSe)_m. The photoluminescence peak energies shift systematically with changes in the selenium-to-sulfur ratio of these ordered alloys. The (ZnS)_n(ZnSe)_<12n> ordered alloys grow coherently with excellent structural and optical properties and exhibit low defect densities.
- 社団法人応用物理学会の論文
- 1994-05-15
著者
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Fujiwara H
Tsukuba Research Laboratory Hitachi Maxell Ltd.
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SHIMIZU Isamu
The Graduate School at Nagatsuta
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Fujiwara H
Toshiba Corp. Yokohama Jpn
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Shimizu I
Osaka Univ. Osaka Jpn
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Fujiwara Hiroyuki
Department Of Materials Science And Processing Graduate School Of Engineering Osaka University
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Shimizu I
The Graduate School At Nagatsuta Tokyo Institute Of Technology
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Shimizu Isamu
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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FUJIWARA Hiroyuki
The Graduate School at Nagatsuta, Tokyo Institute of Technology
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NABETA Toshiyuki
The Graduate School at Nagatsuta, Tokyo Institute of Technology
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Nabeta Toshiyuki
The Graduate School At Nagatsuta Tokyo Institute Of Technology
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