Preparations of a-Si: H from Higher Silanes (Si_nH_<2n+2>) with the High Growth Rate
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概要
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Amorphous(a-) Si: H films showing an excellent photoconductive property were prepared by glow discharge of higher silanes (Si_nH_<2n+2>[n=2-4]) at high growth rate more than 60 A/s. The gaseous mixture of higher silane was prepared by silent glow discharge of SiH_4 in an apparatus connected with a glow discharge reactor. The electric conductivity of the a-Si: H prepared from the higher silane by high growth rate can be controlled over a very wide range by substitutional doping with boron or phosphrus.
- 社団法人応用物理学会の論文
- 1981-09-05
著者
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Shimizu Isamu
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Inoue Eiichi
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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OGAWA Kyosuke
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Ogawa Kyosuke
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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