Role of Seed Crystal Layer in Two-Step-Growth Procedure for Low Temperature Growth of Polycrystalline Silicon Thin Film from SiF4 by a Remote-Type Microwave Plasma Enhanced Chemical Vapor Deposition
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概要
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Role of seed crystal layer which played in low temperaturegrowth of polycrystalline silicon (poly-Si) thin films wasinvestigated by two-step-growth (TSG) process. The TSG involves twodifferent deposition processes, which are called as `seed process' and`growth process'. In order to satisfy the conflicting demands such aslow temperature, high rate and high quality crystal growth, thedeposition conditions in the seed and growth processes wereexamined. As a result, it is confirmed that the seeding of highquality crystal layer is effective to improve crystallinity of growingpoly-Si film, especially for the case grown at lower temperature than300°C. In order to fully promote crystallinity, some thickand high crystallinity seed layer is needed. In addition,epitaxial-like growth on the seed layers can be realized by optimizingdeposition conditions both during the seed and growth processes. WhenH2/SiF4 flow ratios larger than those used during the seedprocess were used during the growth process, lower growth temperatureswere possible with maintaining a smooth interface between the seed andthe grown poly-Si layers. In essence, the hydrogen mixingratio and deposition temperature are complementary parameters, thus itwas possible to reduce deposition temperatures with maintaining largecrystal fraction and oriented structure, if the hydrogen mixing ratiowas increased to an appropriate amount. Furthermore, in situellipsometry analysis indicated that, under optimal conditions, theinterface between the seed and the growing film can indeed be smoothand epitaxial-like. TSG is a promising technique by which to fabricatehigh quality poly-Si thin films on glass substrates at lowtemperatures.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1999-10-15
著者
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Kamiya Toshio
Materials And Structures Laboratory Tokyo Institute Of Technology
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FORTMANN Charles
Graduate School, Tokyo Institute of Technology
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SHIMIZU Isamu
Graduate School, Tokyo Institute of Technology
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Ro Kazuyoshi
Graduate School, Tokyo Institute of Technology
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Ro Kazuyoshi
Graduate School, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Fortmann Charles
Graduate School, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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