Roles of Atomic Hydrogen in Chemical Annealing
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概要
- 論文の詳細を見る
A systematic study has been performed to reveal the role of atomic hydrogen in chemical annealing, where the deposition of a thin layer and treatment with atomic hydrogen are repeated alternately, for the fabrication of a stable structure. Structural relaxation resulting from impingement of atomic hydrogen on the growing surface is differentiated into two processes: the structural promoted relaxation on the surface and changes caused within the sub-surface depending on the conditions for deposition of the thin layer and the flux of atomic hydrogen. The structural changes within the sub-surface resulted in either the widening of the optical gap or crystallization at rather low substrate temperatures (T_s:100-150℃). High-quality a-Si:H with the optical gap of 1.87 eV exhibiting rather high stability against light soaking was successfully fabricated by this technique. The defect density of the film was 4×10^<15>cm^<-3> in its well annealed state and 6×10^<16> cm^<-3> in the saturated state. At high T_s, on the other hand, the hydrogen treatment mainly enhanced chemical activities of the growing surface and resulted in either narrowing of the optical gap or promotion of the grain growth.
- 社団法人応用物理学会の論文
- 1995-02-15
著者
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Nakamura Kenjiro
Tokyo Institute Of Technology The Graduate School
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Nakamura Kenjiro
Tokyo Institute Of Technology
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Shimizu Isamu
Tokyo Institute of Technology
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Yoshino Kunihiko
Tokyo Institute Of Technology The Graduate School
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Shimizu Isamu
Tokyo Institute Of Technology The Graduate School
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Takeoka Shinya
Tokyo Institute of Technology, The Graduate School
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Takeoka Shinya
Tokyo Institute Of Technology The Graduate School
関連論文
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