Role of Hydrogen Plasma during Growth of Hydrogenated Microcrystalline Silicon : In Situ UV-Visible and Infrared Ellipsometry Study
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概要
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We have applied in situ UV-visible and infrared phase-modulated ellipsometry to investigate the role of hydrogen plasma during the growth of hydrogenated microcrystalline silicon (μc-Si:H) by plasma-enhanced chemical vapor deposition (PECVD). The results of the deposition of μc-Si:H from the SiH_4 highly diluted in H_2, layer-by-layer (LbL) technique and post-hydrogenation experiments showed that the 3-dimensional cross-linking and relaxation of a Si network near the growing surface were essential for the formation of microcrystalline silicon. The major role of hydrogen plasma is the creation of the free volumes on the growing surface due to the inhomogeneous etching of the Si network and the promotion of the cross-linking reactions.
- 社団法人応用物理学会の論文
- 1994-10-15
著者
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Shimizu Isamu
Tokyo Institute of Technology
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Shirai Hajime
Tokyo Institute Of Technology The Graduate School At Nagatsuta:(present Address) The Faculty Of Engi
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DREVILLON Bernard
Laboratoire de Physique des Interfaces et des Couches Minces, (UPR A0258 du CNRS), Ecole Polytechniq
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Drevillon Bernard
Laboratoire De Physique Des Interfaces Et Des Couches Minces (upr A0258 Du Cnrs) Ecole Polytechnique
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Shimizu Isamu
Tokyo Institute Of Technology The Graduate School At Nagatsuta
関連論文
- Gas Phase Diagnosis of Disilane/Hydrogen RF Glow Discharge Plasma and Its Application to High Rate Growth of High Quality Amorphous Silicon
- Structure of Polycrystalline Silicon Thin Film Fabricated from Fluorinated Precursors by Layer-by-Layer Technique
- Preparation of High-Quality Microcrystalline Silicon from Fluorinated Precursors by a Layer-by-Layer Technique
- Role of Atomic Hydrogen During Growth of Hydrogenated Amorphous Silicon in the "Chemical Annealirng"
- Role of Hydrogen Plasma during Growth of Hydrogenated Microcrystalline Silicon : In Situ UV-Visible and Infrared Ellipsometry Study
- Silicon-Hydrogen (SiH_n, (n,=1, 2, 3)) Bonding Configurations in Very Thin Hydrogenated Amorphous Silicon Films Deposited on Various Kinds of Substrates under Different SiH_4 Dilution Conditions
- In Situ Study of the Interfaces Between Plasma-Deposited Amorphous Silicon and Silicon Dioxide by UV-IR Spectroellipsometry ( Plasma Processing)
- Roles of Atomic Hydrogen in Chemical Annealing
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