In Situ Study of the Interfaces Between Plasma-Deposited Amorphous Silicon and Silicon Dioxide by UV-IR Spectroellipsometry (<Special Issue> Plasma Processing)

スポンサーリンク

概要

• 論文の詳細を見る

• An in situ ellipsometry study of the interfaces between plasma-deposited amorphous silicon (a-Si:H) and silicon dioxide (a-SiO_2) is presented. In order to achieve a more detailed description of the interface formation, measurements obtained by UV-visible and infrared (IR) spectroellipsometry are combined. Intermixing layers, about 30-40 Å thick, are clearly revealed at the interface independent of the deposition sequence used. In particular, the presence of SiO and (O)SiH_n bonds in the first few monolayers of the growth of the "top" a-Si:H is identified. Likewise, hydrogen accumulation, revealed by SiH vibrations, is observed during the early stage of the growth of a-SiO_2 on top of a-Si:H. The behaviours of the a-Si:H-a-SiO_2 and a-Si:H-a-SiN_x interfaces are compared.

• 社団法人応用物理学会の論文
• 1994-07-30

著者

• Shirai Hajime

  Laboratoire De Physique Des Interfaces Et Des Couches Minces Upr 258 Du Cnrs:tokyo Institute Of Tech

• Drevillon B

  Ecole Polytechnique

• Drevillon Bernard

  Laboratoire De Physique Des Interfaces Et Des Couches Minces (upr A0258 Du Cnrs) Ecole Polytechnique

• OSSIKOVSKI Razvigor

  Laboratoire de Physique des Interfaces et des Couches Minces, UPR 258 du CNRS

• Ossikovski Razvigor

  Laboratoire De Physique Des Interfaces Et Des Couches Minces Upr 258 Du Cnrs

関連論文

• Role of Hydrogen Plasma during Growth of Hydrogenated Microcrystalline Silicon : In Situ UV-Visible and Infrared Ellipsometry Study
• Silicon-Hydrogen (SiH_n, (n,=1, 2, 3)) Bonding Configurations in Very Thin Hydrogenated Amorphous Silicon Films Deposited on Various Kinds of Substrates under Different SiH_4 Dilution Conditions
• In Situ Study of the Interfaces Between Plasma-Deposited Amorphous Silicon and Silicon Dioxide by UV-IR Spectroellipsometry ( Plasma Processing)

スポンサーリンク