分光エリプソメトリーによる半導体薄膜表面のその場観察
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概要
著者
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Shimizu Isamu
Tokyo Institute of Technology
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Collins Robert
The Pennsylvania State University Intercollege Materials Reseach Laboratory 275 Materials Research L
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Shimizu Isamu
Tokyo Institute Of Technology Graduate School For Interdisciplinary
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清水 勇
Tokyo Institute of Technology, Graduate School for Interdisciplinary
関連論文
- Gas Phase Diagnosis of Disilane/Hydrogen RF Glow Discharge Plasma and Its Application to High Rate Growth of High Quality Amorphous Silicon
- Structure of Polycrystalline Silicon Thin Film Fabricated from Fluorinated Precursors by Layer-by-Layer Technique
- Preparation of High-Quality Microcrystalline Silicon from Fluorinated Precursors by a Layer-by-Layer Technique
- Role of Atomic Hydrogen During Growth of Hydrogenated Amorphous Silicon in the "Chemical Annealirng"
- Role of Hydrogen Plasma during Growth of Hydrogenated Microcrystalline Silicon : In Situ UV-Visible and Infrared Ellipsometry Study
- Roles of Atomic Hydrogen in Chemical Annealing
- 分光エリプソメトリーによる半導体薄膜表面のその場観察