Strong Dependence of Hydrogen Passivation on Donor Concentration and on Donor Depth Profile in Silicon
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概要
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We find from an electron spin resonance (ESR) study that the efficiency of hydrogen passivation of phosphorus donors in silicon decreases from 35 to 0 percent as the donor concentration increases. The measurement of the depth profile of deuterium by secondary ion mass spectrometry (SIMS) shows that deuterium concentration becomes smaller at a P peak region with donor concentrations higher than a critical value (〜1×10^<19>/cm^3). These results indicate that hydrogen becomes inactive for H-P complex formation in heavily donor-doped, metallic silicon.
- 社団法人応用物理学会の論文
- 1991-09-01
著者
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Masuda Kohzoh
Institute Of Materials Science University Of Tsukuba
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Murakami Kouichi
Institute Of Applied Physics University Of Tsukuba
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Fujita Shigeru
Institute Of Materials Science University Of Tsukuba
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