Electron Excitation Memory Induced by Light Irradiation of Hydrogenated Si Nanocrystals Embedded in SiO

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概要

• 論文の詳細を見る

• We demonstrate an electron excitation effect in silicon nanocrystals (SiNCs) embedded in a SiO<inf>2</inf>layer treated with hydrogen atoms for passivation of interface defects. Using electron spin resonance (ESR) measurements of quasi-conduction electrons (QCE) excited at lower temperatures, we observed the enhancement of the number of QCE in SiNCs by light irradiation. The electron excitation effect is retained at temperatures lower than 250 K after stopping the light irradiation. The dependence on the size of SiNCs and on excitation laser wavelength suggest that the main memory process is caused by photo-induced electron charging induced through electron excitation of interface states between SiNCs and SiO<inf>2</inf>.

• The Japan Society of Applied Physicsの論文
• 2013-11-25

著者

• Fukata Naoki

  Institute For Materials Research Tohoku University

• Murakami Kouichi

  Institute Of Applied Physics University Of Tsukuba

• Uchida Noriyuki

  Nanoelectronics Research Institute, Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan

• Fukata Naoki

  Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8577, Japan

• Nagahashi Ayako

  Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8577, Japan

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