Isotope Effect of Penetration of Hydrogen and Deuterium into Silicon through Si/SiO2 Interface
スポンサーリンク
概要
- 論文の詳細を見る
We found a new filtering effect of hydrogen (H) and deuterium (D) isotope atoms for penetration process into crystal silicon (Si) through the interface between a Si and SiO2 native oxide layer. More H atoms are introduced into Si than D for mixing gases. It was determined from H and D mixed-atom treatment of Si wafer with the native oxide and the systematic measurements of Raman scattering of hydrogen molecules (H2, HD, or D2) and secondary ion mass spectrometry. This phenomenon can be tentatively explained in terms of an isotope filtering model of H and D via an intermediate cluster state formed at the interface between the native SiO2 layer and crystal Si.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-09-25
著者
-
Murakami Kouichi
Institute Of Applied Physics University Of Tsukuba
-
Uchida Noriyuki
Nanodevice Innovation Research Center National Institute Of Advanced Industrial Science And Technolo
-
Fukata Naoki
International Center For Materials Nanoarchitectonics National Institute For Materials Science
-
Uchida Noriyuki
Nanodevice Innovation Research Center, Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
-
Ishioka Kunie
Advanced Nano characterization Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0047, Japan
-
Kitajima Masahiro
Advanced Nano characterization Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0047, Japan
-
Morisawa Kunitomo
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-0047, Japan
-
Morihiro Haruhito
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-0047, Japan
-
Shirakawa Ryota
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-0047, Japan
-
Tsujimura Masatoshi
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-0047, Japan
-
Fukata Naoki
International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science and JST PRESTO, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
関連論文
- Strong Wavelength Dependence of Laser Ablation Fragments of Superconductor YBa_2Cu_3O_y
- Laser Excitation Effects on Laser Ablated Particles in Fabrication of High T_c Superconducting Thin Films
- Y-Ba-Cu Oxide Films Formed with Pulsed-Laser Induced Fragments : Electrical Properties of Condensed Matter
- Energy Beam Irradiation of High-T_c Superconductors Y_1Ba_2Cu_3O_ and Ho_1Ba_2Cu_3O_
- Atomic Migration of Metals in the Interfaces of Au-Si and Ni-Si for Crystalline and Amorphous Si Observed by 40 MeV-O^ Ion Backscattering
- Micromachining of Silica Glass Using EUV Radiation of Laser-Produced Plasma
- Micromachining of Silica Glass Using EUV Radiation of Laser-Produced Plasma (特集 量子ビームによるナノバイオエレクトロニクス)
- Ion-Induced Anger Electrons Emitted from MgO and GaP under Shadowing Conditions
- Anger Electron Emission under Jon-Beam Shadowing Conditions
- Visible Light Emission from SiO_x Films Synthesized by Laser Ablation
- Three Different Forms of Hydrogen Molecules in Silicon
- Hydrogen Molecules in Defective Silicon
- Formation of Hydrogen Molecules in n-Type Silicon
- Hydrogen Passivation of Donors and Hydrogen States in Heavily Doped n-Type Silicon
- Thermal Stability of Hg_Cd_xTe Crystals Covered with the Anodic Oxide Films
- Chemical Reaction of Si Nanoparticles during Formation in Gas Phase Observed by a Time-Resolved Photoluminescence Method
- Laser Ablation Synthesis of Hydrogenated Silicon Nanoparticles with Green Photoluminescence in the Gas Phase : Optics and Quantum Electronics
- Increase of 1.5 μm luminescence from Cryogenic Temperature to Room Temperature from Er-doped SiO_2 Films with Si Nanocrystallites Fabricated by Laser Ablation
- Single-Electron Transport through Semiconducting Nanowires: A Comparison between Silicon and Germanium
- Strong Dependence of Hydrogen Passivation on Donor Concentration and on Donor Depth Profile in Silicon
- Shallow Donor Clusters in InP
- Effect of Rapid Solid-Phase Epitaxy of P^+-Implanted Amorphous GaAs and GaAs/Si by Laser Beam Heating
- Electronic Energy Level of Off-Center Substitutional Nitrogen in Silicon: Determination by Electron Spin Resonance Measurements : Electrical Properties Condensed Matter
- Sputtering Phenomenon Induced by Laser-Ablated Particles
- Time-and-Space Resolved X-Ray Absorption Spectroscopy of Laser-Ablated Si Particles
- Synthesis of New Amorphous Semiconductors Assembled from Transition-Metal-Encapsulating Si Clusters
- Nano-Ablation of Inorganic Materials Using Laser Plasma Soft X-rays at around 10 nm
- Direct Etching of Poly(methyl methacrylate) Using Laser Plasma Soft X-rays
- Time-Resolved X-Ray Absorption Spectroscopy for Laser-Ablated Silicon Particles in Xenon Gas
- Temperature Evolution of Spin-Polarized Electron Tunneling in Silicon Nanowire-Permalloy Lateral Spin Valve System
- Effect of Annealing on Mechanical Properties of Materials Formed by Focused Au or Si Ion-Beam-Induced Chemical Vapor Deposition Using Phenanthrene
- Formation Mechanism of Interstitial Hydrogen Molecules in Crystalline Silicon
- Amplitude Saturation of Coherent Phonon Excited by Field Screening in CdTe
- Isotope Effect of Penetration of Hydrogen and Deuterium into Silicon through Si/SiO2 Interface
- Electronic States of P Donors in Si Nanocrystals Embedded in Amorphous SiO2 Layer Studied by Electron Spin Resonance: Hydrogen Passivation Effects
- Light Emission from Nanometer-Sized Silicon Particles Fabricated by the Laser Ablation Method
- Electron Excitation Memory Induced by Light Irradiation of Hydrogenated Si Nanocrystals Embedded in SiO