Single-Electron Transport through Semiconducting Nanowires: A Comparison between Silicon and Germanium
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概要
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Single-electron transistors (SETs) have been fabricated with n-type monocrystalline silicon nanowires (SiNWs) and germanium nanowires (GeNWs) separately. Comparisons of the single-electron transport characteristics between them have been studied at low temperatures. Coulomb oscillations of both devices were found with almost equidistant peak spacing and largely varied peak heights, while charge-stability diagrams showed almost identical diamond-shaped dimensions. Noticeably, for the GeNW-SET, the spacing between neighboring Coulomb-oscillation peaks alternately changed in some gate-voltage ($V_{\text{g}}$) regions, indicating the even--odd effect. On the contrary, the SiNW-SET did not show such effect in the entire measured $V_{\text{g}}$ region. The comparison indicates that the quantum effect is much more prominent in the GeNW-SET than in the SiNW-SET.
- 2011-04-25
著者
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Ishibashi Koji
Advanced Device Laboratory Riken:crest Japan Science And Technology(jst)
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Shin Sung-Kwon
Advanced Device Laboratory, RIKEN, Wako, Saitama 351-0198, Japan
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Fukata Naoki
International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science and JST PRESTO, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Huang Shaoyun
Advanced Device Laboratory, RIKEN, Wako, Saitama 351-0198, Japan
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