Electronic Transport of Single-Wall Carbon Nanotubes with Superconducting Contacts
スポンサーリンク
概要
- 論文の詳細を見る
The electrical transport properties of an individual single-wall carbon nanotube (SWCNT) with superconducting contacts have been studied below 1 K. Depending on the contact resistance between the SWCNT and the metallic contact, the samples were categorized in two different regimes in this study. In the strong coupling regime with ignored Coulomb blockade effect, the zero-voltage conductance enhancement due to the superconducting proximity effect was observed as well as the multi-Andreev reflection (MAR) processes. In the weaker coupling regime, a signature of the Kondo effect was observed when the contact metals were in the normal state. When they were in the superconducting state, the MAR processes were observed, which appeared to be related to the Kondo effect.
- 2011-03-25
著者
-
Ishibashi Koji
Advanced Device Laboratory Riken:crest Japan Science And Technology(jst)
-
Akimoto Hikota
Nanoscience Development and Support Team, RIKEN Advanced Science Institute, Wako, Saitama 351-0198, Japan
-
Shimizu Maki
Advanced Device Laboratory, RIKEN Advanced Science Institute, Wako, Saitama 351-0198, Japan
関連論文
- Observation of Quantum Level Spectrum for Silicon Double Single-Electron Transistors
- Quantum dot transport of semiconducting single-wall carbon nanotubes
- Low Pressure Chemical Vapor Deposition of Single-Wall Carbon Nanotubes
- Band-Gap Tuning of an Individual Single-Walled Carbon Nanotube with Uniaxial Strain
- Electric properties of single-walled carbon nanotube film field effect transistors with various work function electrodes : a comparison between pristine and potassium-encapsulated nanotubes
- On the Realization of Quantum Computing Devices with Carbon Nanotube Quantum Dots(New System Paradigms for Integrated Electronics)
- Fabrication of Nanogap Electrodes by the Molecular Lithography Technique
- Single-Electron Transport through Semiconducting Nanowires: A Comparison between Silicon and Germanium
- Transport Characteristic Control of Field-Effect Transistors with Single-Walled Carbon Nanotube Films Using Electrode Metals with Low and High Work Functions
- Towards graphene GHz/THz nanosensor (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Electronic Transport of Single-Wall Carbon Nanotubes with Superconducting Contacts
- Effect of Quantum Hall State of Substrate on Single-Electron Transport of Carbon Nanotube Quantum Dots
- One-Dimensional Shell Structures and Excitation Spectrum in Single-Wall Carbon Nanotube Quantum Dots
- Band Gap Narrowing and Electron Doping by Potassium Encapsulation into Single-Walled Carbon Nanotubes
- Local Change of Carbon Nanotube-Metal Contacts by Current Flow through Electrodes
- Temperature Evolution of Spin-Polarized Electron Tunneling in Silicon Nanowire-Permalloy Lateral Spin Valve System
- Throughput Scaling of Ultra-Wide Band Ad Hoc Networks with Infrastructure
- Analysis of Operation Mechanism of Field Effect Transistor Composed of Network of High-Quality Single Wall Carbon Nanotubes by Scanning Gate Microscopy
- Quantum Dots and Their Tunnel Barrier in Semiconducting Single-Wall Carbon Nanotubes with a p-Type Behavior
- Electronic Transport of a Carbon Nanotube Quantum Dot in Different Coupling Regimes
- Fabrication of a Single-Electron Inverter in Single-Wall Carbon Nanotubes
- Nested Transmit Diversity Based on a Joint Network-Channel Coding
- Low Pressure Chemical Vapor Deposition of Single-Wall Carbon Nanotubes
- B-5-98 Adaptive Network Coded Cooperation with One-bit Feedback