Quantum Dots and Their Tunnel Barrier in Semiconducting Single-Wall Carbon Nanotubes with a p-Type Behavior

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概要

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• Electrical transport properties have been measured in an individual p-type semiconducting single-wall carbon nanotube at the temperature range from 1.5 K to 160 K. The quantum dot transport has been observed, which depends on the gate voltage range. In the small positive gate voltage range, the single quantum dot behavior was observed, while the multi-dot behavior was observed in the further positive gate voltage. In the sufficiently large positive gate voltage range, no current flowed. The barrier height in the single quantum dot regime was estimated to be ${\sim}10$ meV by measuring the temperature dependence of the current–voltage curve at a Coulomb peak position.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-04-15

著者

• Ishibashi Koji

  Advanced Device Laboratory Riken:crest Japan Science And Technology(jst)

• Tsuya Daiju

  Advanced Device Laboratory The Institute Of Physical And Chemical Research (riken)

• Aoyagi Yoshinobu

  Department Of Electrical Engineering Faculty Of Engineering Science Osaka University

• Suzuki Masaki

  Advanced Device Laboratory The Institute Of Physical And Chemical Research (riken)

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