Low Pressure Chemical Vapor Deposition of Single-Wall Carbon Nanotubes
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概要
- 論文の詳細を見る
Single-wall carbon nanotubes (SWCNTs) have been grown by catalytic chemical vapor deposition (CCVD) at 0.05 Pa using an ultrahigh-vacuum chamber. The characterization of SWCNTs grown at various temperatures and pressures has been carried out by Raman spectroscopy and scanning electron microscopy. Our main finding is that SWCNTs could be grown even at 0.05 Pa, which is much lower than that used in standard CCVD. Moreover, the growth temperature for obtaining the maximum intensity of the G+ Raman signal at 0.05 Pa was lower (by more than 100 °C) than the commonly used temperature at ${\sim}1$ kPa.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2006-06-25
著者
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Zhang Bao-ping
Advanced Device Laboratory The Institute Of Physical And Chemical Research (riken)
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Ishibashi Koji
Advanced Device Laboratory Riken:crest Japan Science And Technology(jst)
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Shiokawa Takao
Advanced Device Laboratory The Institute Of Physical And Chemical Research (riken)
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Suzuki Masaki
Advanced Device Laboratory The Institute Of Physical And Chemical Research (riken)
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Ishibashi Koji
Advanced Device Laboratory, The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
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Suzuki Masaki
Advanced Device Laboratory, The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
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Shiokawa Takao
Advanced Device Laboratory, The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
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