Fabrication of Nanogap Electrodes by the Molecular Lithography Technique
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概要
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We have developed fabrication processes of nanogap electrodes with various metals, by combining the molecular lithography technique, in which self-assembled molecular (SAM) layers with an accurately defined thickness are used for resist, and the electron beam lithography. Until now, the molecular lithography technique has been applied to Au and Pt to fabricate the nanogap electrodes, because a thiol-group of the termini molecule that the SAM resist contains is easily stuck to these metals. In this work, we have extended the technique to various metals on which the SAM layers is hard to be formed, with the help of the X-ray photoelectron spectroscopy (XPS) to obtain information on adhesion conditions of the SAM layers on the metals. Finally, we demonstrate fabrication of the Nb nanogap electrodes with the developed technique. An Au nanoparticle was embedded in between the nanogap, which showed the Coulomb blockade effect and the superconducting gap in the current--voltage curves.
- 2011-03-25
著者
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Ishibashi Koji
Advanced Device Laboratory Riken:crest Japan Science And Technology(jst)
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Ogawa Takuji
Department Of Chemistry Faculty Of Science Ehime University
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Tanaka Hirofumi
Department Of Agricultural Chemistry Nagoya University
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Nishino Takayuki
Advanced Device Laboratory, RIKEN Advanced Science Institute, Wako, Saitama 351-0198, Japan
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Negishi Ryota
Department of Applied Physics, Osaka University, Suita, Osaka 560-0871, Japan
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