Effect of Quantum Hall State of Substrate on Single-Electron Transport of Carbon Nanotube Quantum Dots
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概要
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The effect of the quantum Hall state of a GaAs/AlGaAs two-dimensional electron gas (2DEG) substrate on the single-electron transport of carbon nanotube (CNT) quantum dots (QDs) has been investigated when the 2DEG substrate was used as a back gate to CNT QDs. We found that the gating to CNT QDs through the 2DEG was not effective when the transverse resistance of the 2DEG was on the Hall plateau, whereas it is effective when the transverse resistance of the 2DEG was not on the Hall plateau. The possible origin of the effect is the transition of the electronic state of the 2DEG at the Fermi energy from the extended state to the localized state.
- 2009-01-25
著者
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Ishibashi Koji
Advanced Device Laboratory Riken:crest Japan Science And Technology(jst)
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Suzuki Masaki
Advanced Device Laboratory The Institute Of Physical And Chemical Research (riken)
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Moriyama Satoshi
Advanced Device Laboratory Riken:tokyo Institute Of Technology
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Yamaguchi Tomohiro
Advanced Device Laboratory The Institute Of Physical And Chemical Research (riken)
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Moriyama Satoshi
Advanced Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
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Tsukamoto Takeo
Advanced Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
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Ishibashi Koji
Advanced Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
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