Band Gap Narrowing and Electron Doping by Potassium Encapsulation into Single-Walled Carbon Nanotubes
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概要
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We have fabricated field-effect transistors (FETs) with pristine and potassium-encapsulated single-walled carbon nanotube (SWNT) films, and the effects of potassium encapsulation are investigated. The transformation from a unipolar characteristic to an ambipolar characteristic by potassium encapsulation is observed from the measurement of the gate voltage dependence ($V_{\text{gs}}$) of the current ($I$) for SWNT-film FETs. This result indicates that the potassium encapsulation into SWNTs causes band gap narrowing. In addition, the $n$-type region of the $I$–$V_{\text{gs}}$ curve is expanded during annealing of the devices; electron transfer from potassium to SWNTs occurs owing to the removal of the adsorbates. The adsorbate removal is confirmed by photoemission spectroscopy measurement. The FET with an individual potassium-encapsulated SWNT shows an ambipolar characteristic.
- 2007-04-30
著者
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Ishibashi Koji
Advanced Device Laboratory Riken:crest Japan Science And Technology(jst)
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Maki Hideyuki
Department Of Applied Physics And Physico-informatics Faculty Of Science And Technology Keio Univers
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Sato Tetsuya
Department Of Agricultural Chemistry Obihiro University Of Agriculture And Veterinary Medicine
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Suzuki Satoru
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
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Suzuki Satoru
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Maki Hideyuki
Department of Applied Physics and Physico-Informatics, Faculty of Science and Technology, Keio University, Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan
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Ishibashi Koji
Advanced Device Laboratory, The Institute of Physical and Chemical Research (RIKEN), Wako, Saitama 351-0198, Japan
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Suzuki Satoru
NTT Basic Research Laboratories
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