Multi-Back-Gate Control of Carbon Nanotube Double-Quantum Dot
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概要
- 論文の詳細を見る
We have fabricated single-walled carbon nanotube (SWNT) quantum dot device with local multi-back gates, in which a SWNT is not surrounded by an insulator or gate electrodes. The charge states of multi-quantum dots, which are separated by an intrinsic defect of a SWNT, can be independently controlled by applying two local back gates. The charge stability diagram changes depending on the gate voltage range, which changes the interdot coupling between two dots. Furthermore, a honeycomb charge stability diagram corresponding to an intermediately coupled double-quantum dot is also observed.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-04-25
著者
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KOBAYASHI Yoshihiro
NTT Basic Research Laboratories
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Maki Hideyuki
Department Of Applied Physics And Physico-informatics Faculty Of Science And Technology Keio Univers
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Sato Tetsuya
Department Of Agricultural Chemistry Obihiro University Of Agriculture And Veterinary Medicine
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Suzuki Satoru
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
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Mizuno Tomoyuki
Department of Applied Physics and Physico-Informatics, Faculty of Science and Technology, Keio University, Hiyoshi, Kohoku, Yokohama 223-8522, Japan
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Maki Hideyuki
Department of Applied Physics and Physico-Informatics, Faculty of Science and Technology, Keio University, Hiyoshi, Kohoku, Yokohama 223-8522, Japan
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Sato Tetsuya
Department of Applied Physics and Physico-Informatics, Faculty of Science and Technology, Keio University, Hiyoshi, Kohoku, Yokohama 223-8522, Japan
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Suzuki Satoru
NTT Basic Research Laboratories
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