Effect of Annealing on Mechanical Properties of Materials Formed by Focused Au or Si Ion-Beam-Induced Chemical Vapor Deposition Using Phenanthrene
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概要
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The hardness and Young's modulus of materials deposited by focused Au or Si ion-beam-induced chemical vapor deposition using phenanthrene as a precursor gas were measured by means of nanoindentation. Before annealing, the hardness and Young's modulus of the materials deposited using Au ions were higher than those formed using Si or Ga ions. After annealing at 800 °C, however, the hardness and Young's modulus of the material formed using Si ions were markedly increased, but those formed using Au or Ga ions were decreased. From the change in Raman spectra, the decrease might be related to a change in the carbonaceous materials from an amorphous phase to graphite and disordered phases upon annealing. On the other hand, from the X-ray photoelectron spectroscopy measurement, it was observed that some of the Si atoms in the deposited material chemically combined with the deposited C atoms and formed Si–C (silicon carbide) bonds upon annealing, resulting in the increase in the hardness and Young's modulus.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-06-25
著者
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YANAGISAWA Junichi
Division of Advanced Electronics and Optical Science, Graduate School of Engineering Science, Osaka
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Nagata Takahiro
Advanced Electronic Materials Center National Institute For Materials Science (nims)
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Tanaka Hideaki
Division Of Development Neurobiology Department Of Neuroscience And Immunology Kumamoto University
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Fukata Naoki
International Center For Materials Nanoarchitectonics National Institute For Materials Science
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Chikyow Toyohiro
Advanced Electric Materials Center, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Yo Takuma
Division of Advanced Electronics and Optical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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Sakai Akira
Division of Advanced Electronics and Optical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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Yanagisawa Junichi
Division of Advanced Electronics and Optical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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Nagata Takahiro
Advanced Electric Materials Center, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Fukata Naoki
International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science and JST PRESTO, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Fukata Naoki
International Center for Materials Nanoarchitectonics, National Institute for Materials Science and PRESTO JST, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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