Surface Nitridation of $c$-Plane Sapphire Substrate by Near-Atmospheric Nitrogen Plasma
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概要
- 論文の詳細を見る
The nitridation of $c$-plane sapphire substrates by near-atmospheric nitrogen plasma was investigated. The nitridation was carried out by irradiating the substrates directly (direct plasma) and remotely (remote plasma) with a flow of 400 sccm of generated nitrogen species at room temperature. After nitridation, the substrates maintained a clear step-and-terrace structure. X-ray photoelectron spectroscopy revealed clear differences in nitridation between the direct and remote plasma treatments. The substrate irradiated by the remote plasma showed mostly surface nitrogen termination, whereas the substrate irradiated by the direct plasma included numerous Al–N and O–N bonds.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-04-25
著者
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Nagata Takahiro
Advanced Electronic Materials Center National Institute For Materials Science (nims)
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Haemori Masamitsu
Advanced Electronic Materials Center National Institute For Materials Science (nims)
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Uehara Tsuyoshi
Sekisui Chemical Co. Ltd.
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Chikyow Toyohiro
Advanced Electric Materials Center, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Anzai Junichiro
Sekisui Chemical Co., Ltd., Wadai, Tsukuba, Ibaraki 300-4292, Japan
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Nagata Takahiro
Advanced Electric Materials Center, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Nagata Takahiro
Advanced Electronic Materials Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
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Haemori Masamitsu
Advanced Electronic Materials Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
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Haemori Masamitsu
Advanced Electric Materials Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
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Uehara Tsuyoshi
Sekisui Chemical Co., Ltd., Wadai, Tsukuba, Ibaraki 300-4292, Japan
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