Impact of Cu Electrode on Switching Behavior in a Cu/HfO2/Pt Structure and Resultant Cu Ion Diffusion
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概要
- 論文の詳細を見る
In a newly proposed switching device using polycrystalline HfO2 thin film with ion diffusion path, we have found that a Cu electrode could contribute to improved switching performance. Current--voltage measurements at room temperature revealed clear resistive switching, not accompanied by a forming process, in our Cu/HfO2/Pt structure. The current step difference from one state to the other one was in the order of $10^{3}$--$10^{4}$, giving a sufficient on/off ratio. Voltage sweep polarity suggested that filamentary Cu paths were formed due to Cu ion diffusion and annihilated at the HfO2/Pt interface at reversed bias. This filament path formation and annihilation was the origin of the switching device performance.
- Japan Society of Applied Physicsの論文
- 2009-06-25
著者
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Nagata Takahiro
Advanced Electronic Materials Center National Institute For Materials Science (nims)
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Chikyow Toyohiro
Advanced Electronic Materials Center National Institute For Materials Science (nims)
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Haemori Masamitsu
Advanced Electronic Materials Center, National Institute for Materials Science (NIMS), 1-1 Namiki, T
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Haemori Masamitsu
Advanced Electronic Materials Center National Institute For Materials Science (nims)
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