Effect of Annealing on Implanted Ga of Diamond-Like Carbon Thin Films Fabricated by Focused-Ion-Beam Chemical Vapor Deposition
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概要
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The effect of annealing on implanted Ga of diamond-like carbon (DLC) films on Si substrates fabricated by focused-ion-beam chemical vapor deposition (FIB-CVD) was investigated. Thermal desorption spectroscopy showed two Ga+ peaks at 470 and 630 °C. These temperatures agree with the results of energy-dispersive X-ray diffraction analysis of Ga concentration in the film. Cross-sectional transmission microscopy revealed changes in the structure of the DLC film at each temperature. At approximately 400 °C, the Ga in the film migrated to the surface and desorbed. Above 600 °C, the Si in the DLC layer near the damaged Si substrate interface recrystallized. These results can be applied to enable deliberate control of the mechanical properties of DLC films fabricated by FIB-CVD.
- 2008-12-25
著者
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MATSUI Shinji
CREST-JST
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Nagata Takahiro
Advanced Electronic Materials Center National Institute For Materials Science (nims)
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Haemori Masamitsu
Advanced Electronic Materials Center National Institute For Materials Science (nims)
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Chikyow Toyohiro
Advanced Electric Materials Center, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Sakuma Yoshiki
Advanced Electric Materials Center, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Nakajima Kiyomi
Advanced Electric Materials Center, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Nakajima Kiyomi
Advanced Electric Materials Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
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Kometani Reo
CREST, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan
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Kanda Kazuhiro
CREST, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan
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Sakuma Yoshiki
Advanced Electric Materials Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
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Nagata Takahiro
Advanced Electric Materials Center, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Nagata Takahiro
Advanced Electric Materials Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
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Chikyow Toyohiro
Advanced Electric Materials Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
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Haemori Masamitsu
Advanced Electric Materials Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
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Matsui Shinji
CREST JST, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan
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Kanda Kazuhiro
CREST JST, Japan Science and Technology Agency, Kawaguchi Center Building, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
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