Effect of Y content in (TaC)1-xYx gate electrodes on flatband voltage control for Hf-based high-k gate stacks (Special issue: Dielectric thin films for future electron devices: science and technology)

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Nabatame Toshihide

  Hitachi Research Laboratory Hitachi Ltd.

• Nabatame Toshihide

  Superconductivity Research Laboratory International Superconductivity Technology Center

• Homhuan Pattira

  Nanoscience And Technology Graduate School Chulalongkorn University

• Chikyow Toyohiro

  Advanced Electric Materials Center, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

• Nabatame Toshihide

  Advanced Electronic Materials Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan

• Tungasmita Sukkaneste

  Department of Physics, Faculty of Science, Chulalongkorn University, 254 Phayathai Road, Bangkok 10330, Thailand

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