Nabatame Toshihide | Advanced Electronic Materials Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan

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概要

関連著者

Nabatame Toshihide
Hitachi Research Laboratory Hitachi Ltd.
Nabatame Toshihide
Superconductivity Research Laboratory International Superconductivity Technology Center
Homhuan Pattira
Nanoscience And Technology Graduate School Chulalongkorn University
Chikyow Toyohiro
Advanced Electric Materials Center, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
Nabatame Toshihide
Advanced Electronic Materials Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Tungasmita Sukkaneste
Department of Physics, Faculty of Science, Chulalongkorn University, 254 Phayathai Road, Bangkok 10330, Thailand

著作論文

Effect of Y content in (TaC)1-xYx gate electrodes on flatband voltage control for Hf-based high-k gate stacks (Special issue: Dielectric thin films for future electron devices: science and technology)

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