Effect of Low-Energy Ga Ion Implantation on Selective Growth of Gallium Nitride Layer on Silicon Nitride Surfaces Using Metal Organic Chemical Vapor Deposition
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概要
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Selective formation of GaN on a silicon nitride (SiNx) surface by metal organic chemical vapor deposition (MOCVD) was investigated. Using a partly Ga+-implanted SiNx surface, selective growth of materials was confirmed in the Ga+-implanted region of the SiNx surface without using any masks during the MOCVD process. The surface roughness induced by Ga+ implantation was found to be negligible from atomic force microscopy measurement results. From the confocal microscopy image analysis, X-ray diffraction measurement, and transmission electron microscopy observation results, it was found that the deposited material consists of polycrystalline hexagonal-GaN grains with a size of about 2 μm. A growth mechanism of GaN on the Ga+-implanted SiNx surface is proposed.
- 2011-06-25
著者
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Yanagisawa Junichi
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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NAKAMURA Yoshiaki
Division of Germ Cell Biology, National Institute for Basic Biology, National Institute of Natural Sciences, Aichi 444-8787, Japan
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Sakai Akira
Division of Advanced Electronics and Optical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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Yanagisawa Junichi
Department of Electronic Systems Engineering, School of Engineering, The University of Shiga Prefecture, Hikone, Shiga 522-8533, Japan
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Kikkawa Jun
Division of Advanced Electronics and Optical Science, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
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Isiizumi Kazuya
Division of Advanced Electronics and Optical Science, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
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Sakai Akira
Division of Advanced Electronics and Optical Science, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
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Nakamura Yoshiaki
Division of Advanced Electronics and Optical Science, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
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