Huang Shaoyun | Advanced Device Laboratory, RIKEN, Wako, Saitama 351-0198, Japan
スポンサーリンク
概要
関連著者
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Ishibashi Koji
Advanced Device Laboratory Riken:crest Japan Science And Technology(jst)
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Fukata Naoki
International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science and JST PRESTO, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Huang Shaoyun
Advanced Device Laboratory, RIKEN, Wako, Saitama 351-0198, Japan
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Oda Shunri
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Fukuma Yasuhiro
Advanced Science Institute Riken
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Idzuchi Hiroshi
Institute For Solid State Physics University Of Tokyo
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OTANI YoshiChika
Advanced Science Institute, RIKEN
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Tarun Jean
Advanced Science Institute Riken
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HUANG Shaoyun
Advanced Science Institute, RIKEN
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IDZUCHI Hiroshi
Advanced Science Institute, RIKEN
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FUKATA Naoki
International Center for Materials Nanoarchitectonics, National Institute for Materials Science
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Idzuchi Hiroshi
Advanced Science Institute Riken
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Fukata Naoki
International Center For Materials Nanoarchitectonics National Institute For Materials Science
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Otani Yoshichika
Advanced Science Institute Riken
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Oda Shunri
Quantum Nanoelectronics Research Center And Department Of Physical Electronics Tokyo Institute Of Technology
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Shin Sung-Kwon
Advanced Device Laboratory, RIKEN, Wako, Saitama 351-0198, Japan
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Oda Shunri
Quantum Nanoelectronics Research Center (QNERC), Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan
著作論文
- Single-Electron Transport through Semiconducting Nanowires: A Comparison between Silicon and Germanium
- Temperature Evolution of Spin-Polarized Electron Tunneling in Silicon Nanowire-Permalloy Lateral Spin Valve System