Oda Shunri | Quantum Nanoelectronics Research Center (QNERC), Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan

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著作論文

Atomic Force Microscope Current-Imaging Study for Current Density through Nanocrystalline Silicon Dots Embedded in SiO_2
Position-Controllable Ge Nanowires Growth on Patterned Au Catalyst Substrate
Observation of Quantum Level Spectrum for Silicon Double Single-Electron Transistors
Vapor-Liquid-Solid Growth of Small- and Uniform-Diameter Silicon Nanowires at Low Temperature from Si_2H_6
Study of Single-Charge Polarization on two Charge Qubits Integrated onto a Double Single-Electron Transistor Readout
Control of electrostatic coupling observed for Si double quantum dot structures
Study on Device Parameters of Carbon Nanotube Field Electron Transistors to Realize Steep Subthreshold Slope of Less than 60 mV/Decade
Size Reduction and Phosphorus Doping of Silicon Nanocrystals Prepared by a Very High Frequency Plasma Deposition System
Simulation Study of Charge Modulation in Coupled Quantum Dots in Silicon
Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal--Oxide--Semiconductor Field-Effect Transistors
Electromechanical Simulation of Switching Characteristics for Nanoelectromechanical Memory
Visible Electroluminescence from Spherical-Shaped Silicon Nanocrystals
Formation Mechanism of 100-nm-Scale Periodic Structures in Silicon Using Magnetic-Field-Assisted Anodization
Fabrication of Nanosilicon Ink and Two-Dimensional Array of Nanocrystalline Silicon Quantum Dots
Synthesis of Assembled Nanocrystalline Si Dots Film by the Langmuir–Blodgett Technique
Integration of Tunnel-Coupled Double Nanocrystalline Silicon Quantum Dots with a Multiple-Gate Single-Electron Transistor
Size-Dependent Structural Characterization of Silicon Nanowires
Control of Electrostatic Coupling Observed for Silicon Double Quantum Dot Structures
Theoretical Study of Nonequilibrium Electron Transport and Charge Distribution in a Three-Site Quantum Wire
A Multi-Purpose Electrostatically Defined Silicon Quantum Dot Structure (Special Issue : Solid State Devices and Materials (1))
Conduction Bottleneck in Silicon Nanochain Single Electron Transistors Operating at Room Temperature
Temperature Evolution of Spin-Polarized Electron Tunneling in Silicon Nanowire-Permalloy Lateral Spin Valve System
Growth of Narrow and Straight Germanium Nanowires by Vapor--Liquid--Solid Chemical Vapor Deposition
Self-Heating Effects and Analog Performance Optimization of Fin-Type Field-Effect Transistors
Dual Function of Single Electron Transistor Coupled with Double Quantum Dot: Gating and Charge Sensing
Channel Length Scaling and Surface Nitridation of Silicon Nanocrystals for High-Performance Electron Devices
Impact of Deformation Potential Increase at Si/SiO
Dual Function of Single Electron Transistor Coupled with Double Quantum Dot : Gating and Charge Sensing (Special Issue : Solid State Devices and Materials)
Atomic Force Microscope Current-Imaging Study for Current Density through Nanocrystalline Silicon Dots Embedded in SiO2
Experimental Study of Two-Terminal Resistive Random Access Memory Realized in Mono- and Multilayer Exfoliated Graphene Nanoribbons (Special Issue : Solid State Devices and Materials)
Channel Length Scaling and Surface Nitridation of Silicon Nanocrystals for High-Performance Electron Devices (Special Issue : Solid State Devices and Materials)

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