Algul Berrin | Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S9-12 Ookayama, Meguro, Tokyo 152-8552, Japan
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概要
- Algul Berrin Pinarの詳細を見る
- 同名の論文著者
- Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S9-12 Ookayama, Meguro, Tokyo 152-8552, Japanの論文著者
関連著者
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Uchida Ken
Department Of Biology Faculty Of Science Kumamoto University
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Algul Berrin
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S9-12 Ookayama, Meguro, Tokyo 152-8552, Japan
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Uchida Ken
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Algul Berrin
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Kodera Tetsuo
Quantum NanoElectronics Research Center, Tokyo Institute of Technology, 2-12-1 S9-11 Ookayama, Meguro, Tokyo 152-8552, Japan
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Kodera Tetsuo
Quantum Nanoelectronics Research Center (QNERC), Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan
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Oda Shunri
Quantum NanoElectronics Research Center, Tokyo Institute of Technology, 2-12-1 S9-11 Ookayama, Meguro, Tokyo 152-8552, Japan
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Oda Shunri
Quantum Nanoelectronics Research Center (QNERC), Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan
著作論文
- Study on Device Parameters of Carbon Nanotube Field Electron Transistors to Realize Steep Subthreshold Slope of Less than 60 mV/Decade
- Optimization of Source/Drain Doping Level of Carbon Nanotube Field-Effect Transistors to Suppress OFF-State Leakage Current while Keeping Ideal ON-State Current