Study on Device Parameters of Carbon Nanotube Field Electron Transistors to Realize Steep Subthreshold Slope of Less than 60 mV/Decade

スポンサーリンク

概要

• 論文の詳細を見る

• The gate-induced band-to-band tunneling in carbon nanotube field effect transistors (CNFETs) is studied by solving the Poissson and carrier transport equations self-consistently. The transmission coefficient through the bandgap has been calculated using the Wentzel--Kramers--Brillouin (WKB) approximation. The device parameters of CNFETs with uniformly doped source/drain (S/D) regions have been investigated to find the parameter window to observe subthreshold slope (SS) of less than 60 mV/dec. It is demonstrated that the band-to-band tunneling (BTBT) current can be significantly enhanced by reducing the thickness of inter-layer oxide ($t_{\text{int}}$) between the substrate and carbon nanotube (CNT). With a thin $t_{\text{int}}$ of 10 nm (SiO2) and optimized S/D doping concentrations, a steep SS of less than 60 mV/dec can be achieved.

• 2011-04-25

著者

• Uchida Ken

  Department Of Biology Faculty Of Science Kumamoto University

• Algul Berrin

  Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S9-12 Ookayama, Meguro, Tokyo 152-8552, Japan

• Kodera Tetsuo

  Quantum NanoElectronics Research Center, Tokyo Institute of Technology, 2-12-1 S9-11 Ookayama, Meguro, Tokyo 152-8552, Japan

• Kodera Tetsuo

  Quantum Nanoelectronics Research Center (QNERC), Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan

• Oda Shunri

  Quantum NanoElectronics Research Center, Tokyo Institute of Technology, 2-12-1 S9-11 Ookayama, Meguro, Tokyo 152-8552, Japan

• Oda Shunri

  Quantum Nanoelectronics Research Center (QNERC), Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan

関連論文

• Control of Inter-Dot Electrostatic Coupling by a Side Gate in a Silicon Double Quantum Dot Operating at 4.5K
• Atomic Force Microscope Current-Imaging Study for Current Density through Nanocrystalline Silicon Dots Embedded in SiO_2
• Position-Controllable Ge Nanowires Growth on Patterned Au Catalyst Substrate
• Observation of Quantum Level Spectrum for Silicon Double Single-Electron Transistors
• Vapor-Liquid-Solid Growth of Small- and Uniform-Diameter Silicon Nanowires at Low Temperature from Si_2H_6
• Study of Single-Charge Polarization on two Charge Qubits Integrated onto a Double Single-Electron Transistor Readout
• Control of electrostatic coupling observed for Si double quantum dot structures
• Diagnosis of Tis/T1 Breast Cancer Extent by Multislice Helical CT : A Novel Classification of Tumor Distribution
• Mammary ductoscopy : current issues and perspectives
• Screening ultrasonography revealed 15% of mammographically occult breast cancers
• Percutaneous Endoscopy-Guided Biopsy of an Intracystic Tumor with a Mammary Ductoscopy
• ^Tc-MIBI SPECT Compared with ^TI-SPECT for the Detection of Breast Cancer and Lymph Node Metastasis
• Effect of Glucose on the H_2O_2-Induced Synthesis of Peroxidase in Escherichia coli
• Malignant neoplasm in the axilla of a male : suspected primary carcinoma of an accessory mammary gland
• Metachronous secondary primary occult breast cancer initially presenting with metastases to the contralateral axillary lymph nodes : report of a case
• Primary Small-Cell Neuroendocrine Carcinoma of the Breast : Report of a Case
• Primary Rhabdomyosarcoma of the Breast in a 13-Year-Old Girl : Report of a Case
• Detection of MUC1 and Keratin 19 mRNAs in the Bone Marrow by Quantitative RT-PCR Predicts the Risk of Distant Metastasis in Breast Cancer Patients
• Study on Device Parameters of Carbon Nanotube Field Electron Transistors to Realize Steep Subthreshold Slope of Less than 60 mV/Decade
• Size Reduction and Phosphorus Doping of Silicon Nanocrystals Prepared by a Very High Frequency Plasma Deposition System
• Simulation Study of Charge Modulation in Coupled Quantum Dots in Silicon
• Malignant Melanoma Originating on the Female Nipple : A Case Report
• Experimental Observation of Enhanced Electron–Phonon Interaction in Suspended Si Double Quantum Dots
• Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal--Oxide--Semiconductor Field-Effect Transistors
• Suspended Quantum Dot Fabrication on a Heavily Doped Silicon Nanowire by Suppressing Unintentional Quantum Dot Formation
• Electromechanical Simulation of Switching Characteristics for Nanoelectromechanical Memory
• Visible Electroluminescence from Spherical-Shaped Silicon Nanocrystals
• Formation Mechanism of 100-nm-Scale Periodic Structures in Silicon Using Magnetic-Field-Assisted Anodization
• Fabrication of Nanosilicon Ink and Two-Dimensional Array of Nanocrystalline Silicon Quantum Dots
• Synthesis of Assembled Nanocrystalline Si Dots Film by the Langmuir–Blodgett Technique
• Integration of Tunnel-Coupled Double Nanocrystalline Silicon Quantum Dots with a Multiple-Gate Single-Electron Transistor
• Influence of aerobic exercise with an intermission, using a bicycle ergometer, on fat metabolism in obese patients with gonarthrosis
• Size-Dependent Structural Characterization of Silicon Nanowires
• Control of Electrostatic Coupling Observed for Silicon Double Quantum Dot Structures
• Theoretical Study of Nonequilibrium Electron Transport and Charge Distribution in a Three-Site Quantum Wire
• A Multi-Purpose Electrostatically Defined Silicon Quantum Dot Structure (Special Issue : Solid State Devices and Materials (1))
• Conduction Bottleneck in Silicon Nanochain Single Electron Transistors Operating at Room Temperature
• Temperature Evolution of Spin-Polarized Electron Tunneling in Silicon Nanowire-Permalloy Lateral Spin Valve System
• Optimization of Source/Drain Doping Level of Carbon Nanotube Field-Effect Transistors to Suppress OFF-State Leakage Current while Keeping Ideal ON-State Current
• Growth of Narrow and Straight Germanium Nanowires by Vapor--Liquid--Solid Chemical Vapor Deposition
• Enhanced Degradation by Negative Bias Temperature Stress in Si Nanowire Transistor
• Advantages of Densely Packed Multi-Wire Transistors with Planar Gate Structure Fabricated on Low-$k$ Buried Insulator over Planar Silicon-on-Insulator Devices
• Self-Heating Effects and Analog Performance Optimization of Fin-Type Field-Effect Transistors
• Dual Function of Single Electron Transistor Coupled with Double Quantum Dot: Gating and Charge Sensing
• Channel Length Scaling and Surface Nitridation of Silicon Nanocrystals for High-Performance Electron Devices
• Impact of Deformation Potential Increase at Si/SiO
• Dual Function of Single Electron Transistor Coupled with Double Quantum Dot : Gating and Charge Sensing (Special Issue : Solid State Devices and Materials)
• Atomic Force Microscope Current-Imaging Study for Current Density through Nanocrystalline Silicon Dots Embedded in SiO2
• Experimental Study of Two-Terminal Resistive Random Access Memory Realized in Mono- and Multilayer Exfoliated Graphene Nanoribbons (Special Issue : Solid State Devices and Materials)
• Channel Length Scaling and Surface Nitridation of Silicon Nanocrystals for High-Performance Electron Devices (Special Issue : Solid State Devices and Materials)
• Possible clinical cure of metastatic breast cancer : lessons from our 30-year experience with oligometastatic breast cancer patients and literature review

もっと見る 閉じる

スポンサーリンク