Synthesis of Assembled Nanocrystalline Si Dots Film by the Langmuir–Blodgett Technique
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概要
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We report on a new bottom-up technique for forming silicon nanostructures based on the assembly of nanocrystalline Si (nc-Si) dots by the Langmuir–Blodgett technique. nc-Si dots with a diameter of $10\pm 1$ nm fabricated by a very high frequency (VHF) plasma process are dispersed in solvent and functionalized with an appropriate silane coupling agent. After compression at the surface of a Langmuir trough to form a well-organized two-dimensional array, nc-Si dots are transferred onto Si substrates. We have succeeded in forming a well-assembled nc-Si dot array with an area density of $7.33\times 10^{11}$ cm-2. Furthermore, we clarified what happens at the surface of a Langmuir trough based by analyzing surface pressure-area isotherms.
- 2008-05-25
著者
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Tanaka Atsushi
Quantum Beam Sci. Directorate Japan Atomic Energy Agency
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TSUCHIYA Yoshishige
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology
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Arai Tadashi
Central Research Laboratory Hitachi Ltd.
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SAITO Shin-ichi
Central Research Laboratory, Hitachi, Ltd.
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Oda Shunri
Quantum Nanoelectronics Research Center And Department Of Physical Electronics Tokyo Institute Of Technology
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Mizuta Hiroshi
School of Electronic and Computer Science, University of Southampton, Highfield, Southampton SO17 1BJ, U.K.
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Usami Koichi
Quantum Nanoelectronics Research Centre, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Usami Koichi
Quantum Nanoelectronics Research Center (QNERC), Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan
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Tsuchiya Yoshishige
Quantum Nanoelectronics Research Center and Department of Physical Electronics, Tokyo Institute of Technology, and SORST, Japan Science and Technology Agency, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Tsuchiya Yoshishige
Quantum Nanoelectronics Research Centre, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Oda Shunri
Quantum Nanoelectronics Research Centre, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Oda Shunri
Quantum Nanoelectronics Research Center (QNERC), Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan
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Arai Tadashi
Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan
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