Control of Electrostatic Coupling Observed for Silicon Double Quantum Dot Structures
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概要
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We study the electrostatic coupling in the silicon double quantum dot (DQD) structure as a key building block for a charge-based quantum computer and a quantum cellular automaton (QCA). We realize the three interdot coupling regimes of the DQD structure only by optimizing the DQD design and the thermal oxidation condition. We then demonstrate that the electrostatic coupling between DQDs can be modulated by tuning the negative voltage of the side gate electrode. Note that the interdot coupling was largely modulated with a small decrease in the gate voltage from 0 to $-100$ mV because our structure initially has the DQD geometry. Furthermore, the device fabrication is compatible with the conventional silicon complementary metal–oxide–semiconductor (CMOS) process. This structure is suitable for the future integration of CMOS devices. In addition, we show the derivation of the DQDs’ capacitances, including the gate cross capacitances, as a function of the spacing between the two adjacent charge triple points. By using these capacitances, the electron transport properties of the DQD structure are simulated, and the modulation of the electrostatic coupling is successfully simulated as the change of the total capacitance in DQDs.
- 2008-06-25
著者
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Yamahata Gento
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Oda Shunri
Quantum Nanoelectronics Research Center And Department Of Physical Electronics Tokyo Institute Of Technology
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Mizuta Hiroshi
School of Electronic and Computer Science, University of Southampton, Highfield, Southampton SO17 1BJ, U.K.
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Durrani Zahid
Department of Electrical and Electronic Engineering, Imperial College London, South Kensington Campus, London SW7 2AZ, U.K.
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Tsuchiya Yoshishige
Quantum Nanoelectronics Research Center and Department of Physical Electronics, Tokyo Institute of Technology, and SORST, Japan Science and Technology Agency, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Tsuchiya Yoshishige
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology and SORST JST, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Yamahata Gento
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology and SORST JST, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Oda Shunri
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology and SORST JST, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Oda Shunri
Quantum Nanoelectronics Research Center (QNERC), Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan
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