Channel Length Scaling and Surface Nitridation of Silicon Nanocrystals for High-Performance Electron Devices (Special Issue : Solid State Devices and Materials)
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Kodera Tetsuo
Quantum Nanoelectronics Research Center (QNERC), Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan
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Usami Koichi
Quantum Nanoelectronics Research Center (QNERC), Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan
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Nakamine Yoshifumi
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Oda Shunri
Quantum Nanoelectronics Research Center (QNERC), Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan
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Usami Koichi
Quantum Nanoelectronics Research Center and Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8852, Japan
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Ferdous Susoma
Quantum Nanoelectronics Research Center and Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8852, Japan
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Kawano Yukio
Quantum Nanoelectronics Research Center and Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8852, Japan
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