Size-Dependent Structural Characterization of Silicon Nanowires
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概要
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Twin formation in silicon nanowires (SiNWs) grown via the vapor–liquid–solid (VLS) mechanism was investigated. We found that the formation of twins in SiNWs was predominantly affected by the SiNW diameter: they are formed only for SiNWs with a diameter larger than a certain critical value, while single crystal NWs can form when the diameter is smaller. Detailed observation revealed that, in SiNWs grown in the [111] direction, which are the most commonly observed NWs under current experimental conditions, periodic twins are formed while multiple twins are formed in the minor [110]-directed NWs. The defect formation mechanism is also discussed for the purpose of better control of crystal perfection in SiNWs.
- 2008-06-25
著者
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Akhtar Saeed
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Usami Koichi
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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TSUCHIYA Yoshishige
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology
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MIZUTA Hiroshi
Solution Oriented Research for Science and Technology, JST
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Oda Shunri
Quantum Nanoelectronics Research Center And Department Of Physical Electronics Tokyo Institute Of Technology
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Mizuta Hiroshi
Solution Oriented Research for Science and Technology, JST, Kawaguchi, Saitama 332-0012, Japan
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Usami Koichi
Quantum Nanoelectronics Research Center (QNERC), Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan
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Tsuchiya Yoshishige
Quantum Nanoelectronics Research Center and Department of Physical Electronics, Tokyo Institute of Technology, and SORST, Japan Science and Technology Agency, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Akhtar Saeed
Quantum Nanoelectronics Research Center, and Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Oda Shunri
Quantum Nanoelectronics Research Center (QNERC), Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan
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