Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal--Oxide--Semiconductor Field-Effect Transistors
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概要
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Junctionless, or accumulation-mode, metal--oxide--semiconductor field-effect transistors (MOSFETs), where the channel and source/drain doping types are the same, have attracted growing interests because of their simpler fabrication processes. However, carrier transport properties, in particular, mobility characteristics, in the junctionless silicon-on-insulator (SOI) MOSFETs have been less studied. Although higher mobility in accumulation-mode SOI MOSFETs has been reported, the physical mechanisms of the higher mobility have not yet been clarified. In this work, the physical mechanisms of higher mobility in accumulation-mode MOSFETs have been investigated. We fabricated junctionless SOI MOSFETs with a channel doping concentration of $1\times 10^{17}$ cm-3 and an SOI body thickness of 48 nm whose mobility is greater than the bulk universal mobility in spite of the high doping concentration in the channel. The drain current consists of two components: one in the accumulation layer and the other in the SOI body. The mobility of each component is evaluated separately. As a result, it is revealed that the total mobility is the weighted mean of the two mobility components, where carrier concentration is the weight.
- 2011-09-25
著者
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Uchida Ken
Department Of Biology Faculty Of Science Kumamoto University
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Ohashi Teruyuki
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Oda Shunri
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Kadotani Naotoshi
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Oda Shunri
Quantum Nanoelectronics Research Center (QNERC), Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan
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Takahashi Tsunaki
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Ohashi Teruyuki
Department of Physical Electronics, Tokyo Institute of Technology, Megro, Tokyo 152-8552, Japan
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